Title:
EPITAXIAL SUBSTRATE
Document Type and Number:
Japanese Patent JP2021027299
Kind Code:
A
Abstract:
To provide an epitaxial substrate which is increased in the crystallinity in a Group III nitride layer grown on a silicon substrate.SOLUTION: An epitaxial substrate comprises: a silicon substrate; and a laminate structure formed on the silicon substrate and containing Group III nitride. The rate of a total number NABC of the transparent electrodes for which light emission is detected in emission microscope measurement, namely a sum total of a number NAB of transparent electrodes involved in light emission caused by an applied voltage below 300 V, and a number NC of the transparent electrodes involved in light emission caused by an applied voltage equal to or larger than 300 V and below 800 V is 20% or less to a total number NEL of the plurality of transparent electrodes, provided that in the emission microscope measurement, a voltage is put between the silicon substrate and each transparent electrode with a plurality of transparent electrodes arrayed on a surface of the laminate structure, thereby detecting light emission from a group III nitride disposed under each transparent electrode.SELECTED DRAWING: Figure 1
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Inventors:
YAMAMOTO HIROTAKA
IKEJIRI KEITARO
IKEJIRI KEITARO
Application Number:
JP2019146696A
Publication Date:
February 22, 2021
Filing Date:
August 08, 2019
Export Citation:
Assignee:
SUMITOMO CHEMICAL CO
International Classes:
H01L21/205; C23C16/34; C30B29/06; H01L21/338; H01L29/778; H01L29/812
Attorney, Agent or Firm:
Fukuoka Masahiro
Hideo Tachibana
Hideo Tachibana