GALLIUM-INDIUM-PHOSPHOROUS HIGH ELECTRON MOBILITY TRANSISTOR

Title:

GALLIUM-INDIUM-PHOSPHOROUS HIGH ELECTRON MOBILITY TRANSISTOR

Document Type and Number:

Japanese Patent JPH09246530

Kind Code:

A

Abstract:

To improve transistor property by raising the indium.arsenic composition rate of indium.gallium.arsenic which constitutes a channel layer.

A carrier supply layer 5 and a spacer layer 4 are made of gallium.indium.phosphorus whose lattice constant is smaller than the gallium.arsenic. Then, hereby tensile strength is brought into existence, and the thickness is set so that the distortion energy by this tensile strength may be larger than the distortion energy based on the compressive stress in the indium.gallium.arsenic of the channel layer 3. Hereby, the increase of the film thickness of the channel layer 3 becomes possible, and the transistor property can be improved by increasing the indium.arsenic composition rate of the indium.gallium.arsenic constituting the channel layer 3.

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Inventors:

TSUCHIYA TADAITSU
SAKAGUCHI HARUNORI

Application Number:

JP5207096A

Publication Date:

September 19, 1997

Filing Date:

March 08, 1996

Export Citation:

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Assignee:

HITACHI CABLE

International Classes:

H01L21/205; H01L21/338; H01L29/778; H01L29/812; (IPC1-7): H01L29/778; H01L21/205; H01L21/338; H01L29/812

Attorney, Agent or Firm:

Tadao Hirata

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