To provide a light emitting diode which is formed using AlGaInP system materials, low in deterioration of an emission luminance, and capable of lowering power consumption and achieving high reliability.
A light emitting diode 10 comprises a light emitting part 4 formed on a GaAs substrate 1, and a medium layer 5 and a current diffusion layer 6 made of AlGaInP, where the light emitting part 4 is composed by forming a lower clad layer 41 made of AlGaInP, a light emitting layer 42 made of AlGaInP, and an upper clad layer 43 on the GaAs substrate 1 in order. The respective layers of light emitting part 4 have a hydrogen concentration of 21017 cm-3 or less, a carbon concentration of 21016 cm-3 or less, and an oxygen concentration of 21016 cm-3 or less, and a part or all regions of the current diffusion layer 6 have a hydrogen concentration of 51017 cm-3 or less, a carbon concentration of 51017 cm-3 or less, and an oxygen concentration of 21016 cm-3 or less.
| JPH04364084 | MULTIPLE WAVELENGTH LASER |
| JP4612671 | Light emitting device and semiconductor device |
| JPH06314854 | SURFACE LIGHT EMITTING ELEMENT AND ITS MANUFACTURE |
KONNO TAIICHIRO
ARAI MASAHIRO
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Kenji Tsunoda
Yuji Iwanaga
Keiko Nakamura
Endo Wako
Takashi Nomiyama
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