Title:
LIQUID-PHASE EPITAXIAL GROWTH
Document Type and Number:
Japanese Patent JPH04175290
Kind Code:
A
Abstract:
PURPOSE:To efficiently obtain a semiconductor device having highperformance well structure of multiple quantum by successively bringing a substrate into contact with growth melts in plural melts reservoirs having different base areas wherein the growth melts are contacted with the substrate by sliding the substrate and continuously forming semiconductor layers having different layer thickness. CONSTITUTION:Growth melts 11-14 are stored in plural melt reservoirs 21-24 having different bottom areas wherein growth melt is contacted with an InP substrate 4. A slider 2 arranged on a boat base 1 is operated, the substrate 4 is slid without being stopped between the plural melt reservoirs, the substrate 4 is successively brought into contact with the growth melts 11-14 to continuously form a semiconductor layer having different layer thickness on the substrate 4 by epitaxial growth. Consequently, a semiconductor device having high- performance well structure of multiple quantum required in the field of optical fiber communication, light information treatment, etc.
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Inventors:
ISHINO MASATO
FUJIWARA KIYOSHI
MATSUI YASUSHI
FUJIWARA KIYOSHI
MATSUI YASUSHI
Application Number:
JP30432790A
Publication Date:
June 23, 1992
Filing Date:
November 08, 1990
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
C30B19/00; H01L21/208; (IPC1-7): C30B19/00; H01L21/208
Attorney, Agent or Firm:
Akira Kobiji (2 outside)
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