MEMORY ACCESS UTILIZING PARTIAL REFERENCE VOLTAGE

Japanese Patent JP2014160534

A

PROBLEM TO BE SOLVED: To provide a device, system, and method for performing memory access utilizing a partial reference voltage.SOLUTION: A device 500 includes a comparison logic 520. The comparison logic compares a threshold voltage of a memory cell with at least a pair of partial reference voltages to generate a comparison result. The device includes a reading logic 530 for calculating a bit value of the memory cell at least partially on the basis of the comparison result. The comparison logic generates the at least a pair of partial reference voltages including a first reference voltage and a second reference voltage. The bit value corresponds to any one of a first value and a second value. The threshold voltage in a first threshold voltage range is associated with the first value and the threshold voltage in a second threshold voltage range is associated with the second value. The first threshold voltage range and the second threshold voltage range are not overlapped with each other.

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JP2011141944	SEMICONDUCTOR MEMORY DEVICE
JP2002512439	[Title of Invention] A storage device using a storage material made of a phase change material and a dielectric material.

YANG XUESHI
WU ZINING

JP2014076702A

September 04, 2014

April 03, 2014

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MARVELL WORLD TRADE LTD

G11C16/02; G06F12/16; G11C16/06; G11C29/42

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JP2009537935A	2009-10-29
JP2010505200A	2010-02-18
JP2003203435A	2003-07-18
JP2008059679A	2008-03-13
JPH1011979A	1998-01-16
JP2001093288A	2001-04-06
JP2005032431A	2005-02-03

US20080055990A1	2008-03-06
WO2008140171A1	2008-11-20
WO2008042593A1	2008-04-10

Ryuka international patent business corporation

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