Title:
METHOD FOR MANUFACTURING CAPACITOR FOR SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP3876144
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a capacitor having an RU lower electrode and a BST dielectric film for semiconductor elements which stabilizes the surface of the RU lower electrode before forming the BST dielec tric film in forming the capacitor, this improving the interface characteristic between the lower electrode and the dielectric film to raise the capacitor reliabil ity.
SOLUTION: The capacitor is manufactured by forming a contact hole filled with a doped polysilicon layer and then a diffusion-blocking film, forming a silicate glass film having a concave hole for the capacitor into the top of the contact hole, forming the RU lower electrode in the concave hole, and continuously executing an NH3-plasma treatment and an N2O-plasma treatment to form a BST dielectric film upper electrode.
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Inventors:
Song Song
Application Number:
JP2001322067A
Publication Date:
January 31, 2007
Filing Date:
October 19, 2001
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
H01L21/8242; H01L27/108; H01L21/02; H01L21/321; (IPC1-7): H01L21/8242; H01L27/108
Domestic Patent References:
| JP9246477A | ||||
| JP11224936A | ||||
| JP11121711A | ||||
| JP10223864A | ||||
| JP8153707A | ||||
| JP2001148377A |
Attorney, Agent or Firm:
Hiroyuki Nakagawa