METHOD FOR MANUFACTURING SEMICONDUCTOR THIN FILM AND IMAGE DISPLAY DEVICE

Japanese Patent JP2005217214

A

To provide a high quality and homogeneous semiconductor thin film for reducing the roughness of a film and crystal defect in a film to be generated in the process of crystallization.

This method for manufacturing a semiconductor thin film is provided to carry out laser irradiation of the arbitrary region of a semiconductor thin film formed on a substrate by scanning a laser beam or the substrate to form an almost band-shaped crystal crystallized so that crystal particles can be grown in the scanning direction. On X/Y coordinates where the value x of the beam diameter W(μm) of the laser beam measured in a direction which is almost the same as the scanning direction is defined as an X axis, and the value y of a scanning speed Vs(m/s) is defined as a Y axis, the crystallization processing is carried out in the region where the beam diameter W is larger than the wavelength of the laser beam (condition 1), the scanning speed Vs is smaller than the upper limit of the crystal growing speed (condition 2), and x×(1/y)<25 μs are all satisfied (condition 3).

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HATANO MUTSUKO
HONGO MIKIO
YAZAKI AKIO
TAI MITSUHARU
NODA TAKASHI
TAKASAKI YUKIO

JP2004022473A

August 11, 2005

January 30, 2004

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HITACHI LTD
HITACHI DISPLAYS LTD

G02F1/1368; C30B1/06; G02F1/133; H01L21/20; H01L21/268; H01L21/324; H01L21/336; H01L21/77; H01L21/84; H01L27/12; H01L29/04; H01L29/786; (IPC1-7): H01L21/268; G02F1/1368; H01L21/20; H01L21/336; H01L29/786

JPH1065180A	1998-03-06
JPH0897141A	1996-04-12
JPH08288520A	1996-11-01
JP2003086505A	2003-03-20

Yoji Onodera

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