METHOD FOR MANUFACTURING SIMOX SUBSTRATE, AND SIMOX SUBSTRATE

Title:

METHOD FOR MANUFACTURING SIMOX SUBSTRATE, AND SIMOX SUBSTRATE

Document Type and Number:

Japanese Patent JP2002289820

Kind Code:

A

Abstract:

To solve problems in a SOI substrate, having a silicon substrate of high resistivity and its manufacturing method, and to provide a high resistance SOI substrate of higher quality.

In the method for manufacturing a SIMOX substrate, an embedded oxide layer and a surface single crystal silicon layer are formed by subjecting it to high temperature heat treatment, after oxygen ions are implanted in a single crystal silicon substrate. A process is conducted where a substrate whose average resistivity is at least 100 Ωcm is used as the single-crystal silicon substrate, and held for a fixed time at a temperature lower than or equal to 1,250°C and higher than or equal to 800°C in the last stage of the high- temperature heat treatment; and according to this method, the SIMOX substrate, in which the average resistivity of the substrate part is at least 100 Ωcm, is obtained.

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Inventors:

MATSUMURA ATSUKI
SASAKI TSUTOMU
KITAHARA KOICHI

Application Number:

JP2001093228A

Publication Date:

October 04, 2002

Filing Date:

March 28, 2001

Export Citation:

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Assignee:

NIPPON STEEL CORP

International Classes:

H01L21/02; H01L21/265; H01L21/762; H01L21/76; H01L27/12; (IPC1-7): H01L27/12; H01L21/265; H01L21/76

Attorney, Agent or Firm:

Mikio Hatta (4 outside)

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