METHOD OF USING BLOCK COPOLYMER TO FORM FINE PATTERN OF SEMICONDUCTOR DEVICE

Title:

METHOD OF USING BLOCK COPOLYMER TO FORM FINE PATTERN OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2009182319

Kind Code:

A

Abstract:

To provide a method of using a block copolymer to form a fine pattern of a semiconductor device.

The method includes the steps of: forming a coating layer including a block copolymer having a plurality of repeating units on a substrate; using a mold formed with a first pattern consisting of a plurality of ridges and grooves to transfer the first pattern to a coating layer; rearranging the repeating units of the block copolymer within the coating layer by phase separation while the coating layer is filled in the grooves of the mold to thereby form a self-assembly structure consisting of a plurality of polymer blocks oriented along a direction guided by the ridges and grooves of the mold; and removing some of the plurality of polymer blocks to form a self-assembly fine pattern consisting of some of the remaining polymer blocks.

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Inventors:

YOON DONG KI
KIM HYUN-WOO
YI SHI-YONG
NA HAI-SUB
KIM KYOUNG-TAEK
JANG YUN-KYEONG

Application Number:

JP2008252906A

Publication Date:

August 13, 2009

Filing Date:

September 30, 2008

Export Citation:

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Assignee:

SAMSUNG ELECTRONICS CO LTD

International Classes:

H01L21/027; B29C59/02; B29K25/00; B29K96/04

Attorney, Agent or Firm:

Kyosei International Patent Office

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