Title:
NON-VOLATILE SEMICONDUCTOR MEMORY
Document Type and Number:
Japanese Patent JP2002230989
Kind Code:
A
Abstract:
To provide a non-volatile semiconductor memory having a sense amplifier constitution of high sensitivity.
In this non-volatile semiconductor memory, a constant current circuit C0 is arranged in parallel to a NMOS diode N5 converting the detected current of an array cell side into voltage, and a constant current circuit C1 is arranged in parallel to a NMOS diode N6 converting the detected current of a reference cell side into voltage. An offset current Icom is made to flow by the constant current circuits C0, C1. The difference between two input voltages of a differential amplifier 2 is increased.
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Inventors:
NOJIRI ISAO
OBA ATSUSHI
KAI YOSHIHIDE
OBA ATSUSHI
KAI YOSHIHIDE
Application Number:
JP2001023188A
Publication Date:
August 16, 2002
Filing Date:
January 31, 2001
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G11C16/06; G11C11/56; G11C16/02; G11C16/26; G11C16/28; (IPC1-7): G11C16/06; G11C16/02
Attorney, Agent or Firm:
Hisami Fukami (4 outside)