Title:
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JPH10173169
Kind Code:
A
Abstract:
To improve reliability and controllability of an interface between a gate electrode and a gate insulating film, and enable machining of a gate electrode with excellent precision.
A gate electrode of an MOS transistor is formed by using the following a process wherein a conductive metal oxide film 23 is formed on a gate insulating film 22 on a semiconductor substrate 21, a process wherein a metal film 24 is formed on the conductive metal oxide film 23, a process wherein the metal film 24 is selectively etched to the conductive metal oxide film 23, and the conductive metal oxide film 23 is exposed, and a process wherein the exposed conductive metal oxide layer 23 is selectively etched to the gate insulating film 22.
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Inventors:
NAKAJIMA KAZUAKI
Application Number:
JP33570996A
Publication Date:
June 26, 1998
Filing Date:
December 16, 1996
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L29/78; H01L21/28; H01L21/8242; H01L29/49; H01L21/336; (IPC1-7): H01L29/78
Attorney, Agent or Firm:
Takehiko Suzue (6 outside)
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