Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
Document Type and Number:
Japanese Patent JP2007103694
Kind Code:
A
Abstract:
To enable two or more gate electrodes of different length to have each an FUSI structure uniform in composition independently of the length of a gate.
A semiconductor device is equipped with a first gate electrode 14T1 and a second gate electrode 14T2 which are each formed into full silicide by metal, and different from each other in length. A U-shaped groove whose periphery is high and gate-lengthwise center is low is formed at least on either the first gate electrode 14T1 or the second gate electrode 14T2. The width of the U-shaped groove is dependent on the gate length of the gate electrodes 14T1 and 14T2.
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Inventors:
KUDO CHIAKI
Application Number:
JP2005292005A
Publication Date:
April 19, 2007
Filing Date:
October 05, 2005
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/28; H01L21/8234; H01L21/822; H01L27/04; H01L27/06; H01L27/088; H01L29/41; H01L29/423; H01L29/49; H01L29/78
Attorney, Agent or Firm:
Hiroshi Maeda
Hiroshi Koyama
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori
Seki Kei
Yasuya Sugiura
Hiroshi Koyama
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori
Seki Kei
Yasuya Sugiura
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