Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3431034
Kind Code:
B2
Abstract:
PURPOSE: To precisely control the adding quantity of catalyst element within the method of producing crystalline silicon by heating step at a specific temperature for about four hours using a crystallization assisting catalyst element.
CONSTITUTION: An extremely thin oxide film 13 is formed on an amorphous silicon film 12 formed on a glass substrate 11 and then water solution 14 of acetate solution, etc., whereto 10-200ppm (to be adjusteds of catalyst element such as nickel, etc., is added is to be dripped on the oxide film 13. Next, the whole body held for a specific time in such a state is spin-dried up using a spinner 15 furthermore, to be heated at 550°C for four hours to form a crystalline silicon film. In such a constitution, the concentration of the catalyst element in the completed crystalline silicon film can be precisely controlled by adjusting the concentration of the catalyst element in the solution Finally, a semiconductor device having high characteristic can be manufactured by using this crystalline silicon film.
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Inventors:
Hisashi Ohtani
Akiharu Miyanaga
Akiharu Miyanaga
Application Number:
JP30343693A
Publication Date:
July 28, 2003
Filing Date:
November 09, 1993
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
C01B33/02; H01L21/20; H01L21/336; H01L29/78; H01L29/786; H01L31/10; (IPC1-7): H01L21/20; C01B33/02; H01L21/336; H01L29/786; H01L31/10
Domestic Patent References:
| JP3280420A | ||||
| JP63142807A | ||||
| JP2140915A | ||||
| JP1276616A | ||||
| JP567635A | ||||
| JP2260524A | ||||
| JP220059A | ||||
| JP6474754A |
Other References:
【文献】米国特許5147826(US,A)
Attorney, Agent or Firm:
Hirokuni Kamo