PURPOSE: To facilitate the decrease of weight with a large degree of freedom in shape and improve the impact resistance by a method wherein the title substrate is constructed by the formation of the title transistor on a flexible substrate.
CONSTITUTION: The flexible substrate 1 is a transparent film of poly-ether- sulfone. A gate electrode 2 and an electrode 3 serving as one electrode of a charge holding capacitor are formed on this substrate 1. Next, an insulation film 4 is formed further from above these electrodes 2 and 3. The material of the film 4 is tantalum pentoxide. Moreover, a semiconductor film 5 is formed over the electrode 2 from above the film 4. The material of the film 5 is tellurium. Then, a source electrode 6 and a drain electrode 7 are formed by vapor-deposition of Ind oxide. The matrix substrate for the title transistor can be thus obtained. Processes from the formation of the electrodes 2 and 3 to that of the source and drain electrodes 6 and 7 are all carried out by vapor-deposition; formation by vapor deposition enables film formation without heating the substrate 1 to over a high temperature for substrate deformation.
| JP2668713 | [Title of Invention] High withstand voltage semiconductor device |
| WO/2022/092035 | SEMICONDUCTOR DEVICE |
| JPS63254770 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
UEHARA KIYOHIRO
ENOMOTO TAKAMICHI
OOTA WASABUROU
