SEMICONDUCTOR DEVICE, MANUFACTURING METHOD, SOLID STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS

Title:

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD, SOLID STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS

Document Type and Number:

Japanese Patent JP2016219660

Kind Code:

A

Abstract:

PROBLEM TO BE SOLVED: To further improve reliability.SOLUTION: A connection pad electrically connecting a sensor substrate with a signal processing substrate is formed on an interlayer film provided to the sensor substrate to which a sensor surface having a pixel is formed and a wiring layer of the signal processing substrate performing a signal processing to the sensor substrate. A metal oxide film is formed in the interlayer firm of the sensor substrate and the signal processing substrate, the interlayer film of the connection pad formed in the sensor substrate side and the signal processing substrate side, and the interlayer film of the connection pad formed on the signal processing substrate side and the sensor substrate side. The present technique can be applied for, for example, a lamination type CMOS image sensor.SELECTED DRAWING: Figure 1

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Inventors:

FUJII NOBUTOSHI
HANEDA MASAKI

Application Number:

JP2015104705A

Publication Date:

December 22, 2016

Filing Date:

May 22, 2015

Export Citation:

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Assignee:

SONY CORP

International Classes:

H01L21/768; H01L21/3205; H01L23/522; H01L23/532; H01L27/14; H04N5/369

Attorney, Agent or Firm:

Takashi Nishikawa
Yoshio Inamoto

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