BORON-DOPED TITANIUM NITRIDE LAYER FOR HIGH ASPECT RATIO SEMICONDUCTOR DEVICES

Title:

BORON-DOPED TITANIUM NITRIDE LAYER FOR HIGH ASPECT RATIO SEMICONDUCTOR DEVICES

Document Type and Number:

WIPO Patent Application WO2003012860

Kind Code:

A3

Abstract:

Conductive contacts in a semiconductor structure, and methods for forming the conductive components are provided. The contacts are useful for providing electrical connection to active components beneath an insulation layer (18) in integrated circuits such as memory devices. The conductive contacts comprise boron-doped TiCl4- based titanium nitride (34), and possess a sufficient level adhesion to the insulative layer to eliminate peeling from the sidewalls of the contact opening and cracking of the insulative layer when formed to a thickness of greater than about 200 angstroms.

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Inventors:

DERRAA AMMAR
SHARAN SUJIT
CASTROVILLO PAUL

Application Number:

PCT/US2002/024088

Publication Date:

November 27, 2003

Filing Date:

July 30, 2002

Export Citation:

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Assignee:

MICRON TECHNOLOGY INC (US)

International Classes:

H01L21/285; H01L21/3205; H01L21/28; H01L21/768; H01L21/8242; H01L23/485; H01L23/52; H01L27/10; H01L27/108; H01L29/78; (IPC1-7): H01L21/768; H01L23/532

Foreign References:

US20010002071A1	2001-05-31
US6184135B1	2001-02-06
US20010030552A1	2001-10-18

Other References:

PATENT ABSTRACTS OF JAPAN vol. 018, no. 033 (E - 1493) 18 January 1994 (1994-01-18)
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 03 27 February 1998 (1998-02-27)

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