MANUFACTURE OF SEMICONDUCTOR DEVICE

Japanese Patent JPS58132950

A

PURPOSE:To form a microscopic contact window having an excellent degree of uniformity by a method wherein, when the contact window is going to be provided, the transverse oxidization is positively utilized when a selective oxidization is performed. CONSTITUTION:A polycrystalline Si film 3 is coated on the insulating film 2 covering the substrate 1 whereon each electrode was formed, and an Si3N4 film 4 is coated on the film 3. Then, the film 4 located on the contact window forming region only is left and the film 4 on all the other regions is removed. Subsequently, a thermal oxide film 31 is formed on the film 3, which was formed below the film 4, by performing a high temperature heat treatment in an oxygenous atmosphere using the remaining film 4 as a mask, and it is used as an interlayer insulating film. Lastly, the conact window is formed by removing the film 4, the film 3 located directly below the film 4, and the insulating film of the bottom layer. While these procedures are performed, transverse oxidization is generated due to high temperature heating when the selective oxidization was performed, and the contact window smaller than the width of the film 4 can be formed.

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TAKAHASHI HIDEAKI
KANBARA GINJIROU
INOUE MORIO

JP1608682A

August 08, 1983

February 03, 1982

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MATSUSHITA ELECTRONICS CORP

H01L21/3213; H01L21/283; H01L21/302; H01L21/3065; H01L21/3205; H01L21/60; H01L21/768; H01L23/522; (IPC1-7): H01L21/28; H01L21/302; H01L21/88

Akira Kobiji (2 outside)

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