Title:
POLISHING PAD AND METHOD FOR MANUFACTURE OF SEMICONDUCTOR DEVICE USING THE SAME
Document Type and Number:
WIPO Patent Application WO/2005/081300
Kind Code:
A1
Abstract:
A polishing pad for polishing a semiconductor wafer which has a polishing layer and a cushion layer, characterized in that said polishing layer is formed from an expanded polyurethane and has a flexural modulus of elasticity of 250 to 350 MPa, and said cushion layer is formed from a closed-cell celluler material and has a thickness of 0.5 to 1.0 mm and a strain constant of 0.01 to 0.08 μm/(gf/cm2); and a method for manufacturing a semiconductor device which uses the polishing pad. The above polishing pad can impart excellent flat characteristics and the uniformity of them to an article to be polished such as a semiconductor wafer, without causing scratch.
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Inventors:
SHIMOMURA TETSUO (JP)
NAKAMORI MASAHIKO (JP)
YAMADA TAKATOSHI (JP)
KAZUNO ATSUSHI (JP)
OGAWA KAZUYUKI (JP)
NAKAI YOSHIYUKI (JP)
NAKAMORI MASAHIKO (JP)
YAMADA TAKATOSHI (JP)
KAZUNO ATSUSHI (JP)
OGAWA KAZUYUKI (JP)
NAKAI YOSHIYUKI (JP)
Application Number:
PCT/JP2005/002785
Publication Date:
September 01, 2005
Filing Date:
February 22, 2005
Export Citation:
Assignee:
TOYO TIRE & RUBBER CO (JP)
SHIMOMURA TETSUO (JP)
NAKAMORI MASAHIKO (JP)
YAMADA TAKATOSHI (JP)
KAZUNO ATSUSHI (JP)
OGAWA KAZUYUKI (JP)
NAKAI YOSHIYUKI (JP)
SHIMOMURA TETSUO (JP)
NAKAMORI MASAHIKO (JP)
YAMADA TAKATOSHI (JP)
KAZUNO ATSUSHI (JP)
OGAWA KAZUYUKI (JP)
NAKAI YOSHIYUKI (JP)
International Classes:
B24B37/20; B24B37/24; B24D13/14; H01L21/304; (IPC1-7): H01L21/304; B24B37/00
Foreign References:
| JP2003218074A | 2003-07-31 | |||
| JP2003124161A | 2003-04-25 | |||
| JP2003303794A | 2003-10-24 |
Attorney, Agent or Firm:
Kawamiya, Osamu (IMP Building 3-7, Shiromi 1-chome, Chuo-k, Osaka-shi Osaka 01, JP)
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